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STM32F101X6 Datasheet(PDF) 55 Page - STMicroelectronics

Part # STM32F101X6
Description  Access line, advanced ARM-based 32-bit MCU with Flash memory, six 16-bit timers, ADC and seven communication interfaces
PDF  64 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101X6 Datasheet(HTML) 55 Page - STMicroelectronics

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STM32F101xx
Electrical characteristics
55/64
Figure 21.
ADC accuracy characteristics
Figure 22.
Typical connection diagram using the ADC
1.
Refer to Table 37 for the values of RADC and CADC.
2.
CPARASITIC must be added to CAIN. It represents the capacitance of the PCB (dependent on soldering and
PCB layout quality) plus the pad capacitance (3 pF). A high CPARASITIC value will downgrade conversion
accuracy. To remedy this, fADC should be reduced.
Table 38.
ADC accuracy (fPCLK2 = 10 MHz, fADC = 10 MHz, RAIN < 10 kΩ, VDDA =
3.3 V)(1)
1.
TBD = to be determined.
Symbol
Parameter
Conditions
Typ
Max
Unit
|ET|
Total unadjusted error(2)
2.
ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
3TBD
LSB
|EO|
Offset error(2)
1TBD
|EG|Gain Error
(2)
2TBD
|ED|
Differential linearity error(2)
3TBD
|EL|
Integral linearity error(2)
2TBD
EO
EG
1LSBIDEAL
1LSB
IDEAL
V
DDA
V
SSA
–
1024
-----------------------------------------
=
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
1023
1022
1021
5
4
3
2
1
0
7
6
1
2
3
456
7
1021 1022 1023 1024
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
ai14395
ai14139
STM32F101
VDD
AINx
IL±1mA
0.6V
VT
RAIN
CAIN(1)
VAIN
0.6V
VT
RADC
12-bit A/D
conversion
CADC



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