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MDP20N116PTTH Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MDP20N116PTTH Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 8 page ![]() Magnachip Power Technology MDP20N116PTTH 1) 2) 3) 1. 2. 3. Tc=25 oC Tc=100 oC Tc=25 oC Tc=25 oC Tc=100 oC Operating and storage temperature Avalanche energy, single pulse Total power dissipation Drain current Surface mounted FR-4 board by JEDEC (jesd51-7) 62.5 oC/W oC/W THERMAL RESISTANCE RATINGS PARAMETER Thermal resistance, junction - case Thermal resistance, junction - ambient Pulse width limited by Tjmax Starting TJ=25°C, L=1mH, IAS=27A, VDD=50V, VGS=10V Notes SYMBOL RATING UNIT RθJC 0.5 RθJA Tj, Tstg - 55 ~ 175 oC EAS 365 mJ 150 W Ptot 300 W Pulsed drain current IDM 380 A 67 A ID 95 A V VGS V PARAMETER SYMBOL RATING UNIT VDS 200 20 ± Gate-source Voltage Drain-source Voltage ABSOLUTE MAXIMUM RATINGS, at T J = 25 oC, unless otherwise specified May. 2022. ver. 1.0 2 / 8 All information provided in this document is subject to legal disclaimers Product data sheet |
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