RM150N80DF datasheet(2/7 Pages) RECTRON

2 / 7 page

MOSFET ELECTRICAL CHARACTERISTICS(Ta=25

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Type

Max

Unit

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250μA

Zero gate voltage drain current

IDSS

VDS =64V, VGS = 0V

μA

Gate-body leakage current

IGSS

VGS =

20V, VDS = 0V

±100

Gate threshold voltage

VGS(th)

VDS =VGS, ID =250μA

2.0

4.0

Drain-source on-resistance(a)

RDS(on)

VGS =10V, ID =30A

2.5

3.0

mΩ

VGS =6V, ID =20A

3.5

43.0

mΩ

Dynamic characteristics

Input Capacitance

Ciss

VDS =40V, VGS =0V, f =1.0MHz

5591

Output Capacitance

Coss

744

Reverse Transfer Capacitance

Crss

Switching characteristics

Turn-on delay time

td(on)

VDD=40V, ID=30A, RG=4.5Ω,

RL=1.3Ω,VG=10V

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Total Gate Charge

VDS=40V, ID=30A,

VGS=10V

101

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Source-Drain Diode characteristics

Diode Forward voltage(a)

VSD

TJ=25

, VGS =0V, IS=30A

1.3

Diode Forward current

TC=25

150

Body Diode Reverse Recovery Time

trr

TJ=25

IF=30A,di/dt=100A/us

Body Diode Reverse Recovery Charge

Qrr

TJ=25

IF=30A,di/dt=100A/us

Notes:

a) Pulse width

d 300 Ps, duty cycle d 2%

b) Guaranteed by design, not subject to production testing

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