| Electronic Components Datasheet Search |
|
MCP6541-E/MF Datasheet(PDF) 16 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
MCP6541-E/MF Datasheet(HTML) 16 Page - Microchip Technology |
|
16 / 40 page ![]() MCP201 DS21730F-page 16 © 2007 Microchip Technology Inc. 2.3 AC Specifications TABLE 2-1: MCP201 THERMAL SPECIFICATIONS AC Specifications Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VBAT = 6.0V to 18.0V TAMB = -40°C to +125°C Symbol Parameter Min Typical Max Units Conditions Bus Interface |dV/dt| Slope Rising and Falling Edges 1.0 2.0 3.0 V/µs (40% to 60%), No Load |dV/dt| Slope Rising and Falling edges ALTERNATE 2.0 4.0 6.0 V/µs(Note 1), No Load tTRANSPD Propagation Delay of Transmitter — — 6.0 µ stRECPD = max tRECPD Propagation Delay of Receiver — — 6.0 µ s(tRECPDR or tRECPDF) tRECSYM Symmetry of Propagation Delay of Receiver Rising Edge with Respect to Falling Edge -2.0 — 2.0 µ stRECSYM = max tTRANSSYM Symmetry of Propagation Delay of Transmitter Rising Edge with Respect to Falling Edge -2.0 — 2.0 µ stTRANSSYM = max (tTRANSPDF - tRANSPDR) Voltage Regulator tBACTVE Bus Activity to Voltage Regulator Enabled 10 — 40 µ s Bus debounce time tVEVR Voltage Regulator Enabled to Ready —50 200 µ s (Note 2) t VREGPOR Voltage Regulator Enabled to Ready after POR —— 2.5 ms (Note 2) CLOAD = 25 nF tCSOR Chip Select to Operation Ready 0 50 200 µ s (Note 2) tCSPD Chip Select to Power-down 0 — 40 µ s (Note 2) No CLOAD tSHUTDOWN Short-Circuit to Shutdown — 450 — µ s Characterized but not tested tSCREC Short-Circuit Recovery Time — 2.0 — ms Characterized but not tested (Note 3) Note 1: The mode does not conform to LIN Bus specification version 1.3. 2: Time depends on external capacitance and load. 3: Internal current limited. 2.0 ms typical recovery time (RLBUS = 0 Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB = 25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance). Sym Parameter Min Typical Max Units Test Conditions θRECOVERY Recovery Temperature (junction temperature) —+135 — °C Characterized but not tested θSHUTDOWN Shutdown Temperature (junction temperature) —+155 — °C Characterized but not tested tTHERM Thermal Recovery Time (after Fault condition removed) — 2.0 — ms Characterized but not tested (Note 1) Note 1: Internal current limited. 2.0 ms typical recovery time (RLBUS = 0 Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB = 25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance). |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |