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ST7LITE49M Datasheet(PDF) 158 Page - STMicroelectronics |
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ST7LITE49M Datasheet(HTML) 158 Page - STMicroelectronics |
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158 / 188 page  Electrical characteristics ST7LITE49M 158/188 13.8.2 Electromagnetic Interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. 13.8.3 Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: Human Body model and Machine model. This test conforms to the JESD22-A114A/A115A standard. Table 86. EMI characteristics(1) 1. Data based on characterization results, not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. [fOSC/fCPU] (2) 2. TBD stands for ‘to be determined’. Unit 8/4MHz 16/8MHz SEMI Peak level VDD=5V, TA=+25°C, , conforming to SAE J 1752/3 0.1 MHz to 30 MHz 28 32 dB µV 30 MHz to 130 MHz 31 34 130 MHz to 1 GHz 18 26 SAE EMI Level 3 3.5 - Table 87. Absolute maximum ratings Symbol Ratings Conditions Maximum value(1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (Human Body model) TA=+25 °C 4000 V VESD(CDM) Electrostatic discharge voltage (Charge Device model) TA=+25 °C 500 |
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