GL2310

Page: 2/4

ISSUED DATE :2006/01/20

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

60

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.05

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

5.0

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

10

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

25

uA

-

-

90

Static Drain-Source On-Resistance

-

-

120

m

-

6

10

Gate-Source Charge

-

1.6

-

Gate-Drain (“Miller”) Change

-

3

-

nC

-

6

-

Rise Time

-

5

-

Turn-off Delay Time

-

16

-

Fall Time

-

3

-

ns

Input Capacitance

-

490

780

Output Capacitance

-

55

-

Reverse Transfer Capacitance

-

40

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

Reverse Recovery Time

-

25

-

ns

Reverse Recovery Charge

-

26

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

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