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IPT210N25NFD Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPT210N25NFD Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISF1265 eq IPT210N25NFD N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 69A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 69 A IDM Drain Current-Single Pulse 276 A PD Total Dissipation @TC=25℃ 375 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.4 ℃ /W ELECTRICAL CHARACTERISTICS (TC=25℃) |
Similar Part No. - IPT210N25NFD |
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