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LF400AMH Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LF400AMH Datasheet(HTML) 4 Page - National Semiconductor (TI) |
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4 / 12 page  AC Electrical Characteristics (LF400AMH LF400MH) The following specifications apply for V a ea15V Vb eb15V and T J e 25 C unless otherwise specified Tested Limits in Boldface apply for TJ eb55 Cto a125 C LF400AMH LF400MH Symbol Parameter Conditions Typical Tested Design Typical Tested Design Units (Note 6) Limit Limit (Note 6) Limit Limit (Note 7) (Note 8) (Note 7) (Note 8) ts Settling Time to 001% See Figure 1 365 365 ns to 010% See Figure 1 200 200 ns GBW Minimum Gain AV ea1 CL e 10 pF 16 14 16 14 MHz Bandwidth Product 10 10 MHz SR Minimum Slew Rate AV ea1 CL e 10 pF 30 27 30 27 V ms AV eb1 CL e 10 pF 60 60 V ms w Phase Margin AV ea1 CL e 10 pF 60 60 Degrees en Input Noise Voltage f e 1 kHz RS e 100X 23 23 nV 0Hz Broadband RS e 100X 23 23 mV rms 10 Hz to 10 kHz in Input Noise Current f e 1 kHz 001 001 pA 0Hz Broadband 10 10 pA rms 10 Hz to 10 kHz THD Total Harmonic Distortion f e 1 kHz AV eb1 0002 0002 % RL e 10k CIN Input Capacitance 7 7 pF DC Electrical Characteristics (LF400AMH LF400MH) The following specifications apply for V a ea15V Vb eb15V and T J e 25 C unless otherwise specified Tested Limits in Boldface apply for TJ eb55 Cto a125 C LF400AMH LF400MH Symbol Parameter Conditions Typical Tested Design Typical Tested Design Unit (Note 6) Limit Limit (Note 6) Limit Limit (Note 7) (Note 8) (Note 7) (Note 8) VOS Maximum Input VCM e 0V TJ e 25 C g05 g30 mV Offset Voltage RS e 0 g20 g50 mV RL e % IOS Maximum Input VCM e 0V (Note 5) g50 g100 g50 g100 pA Offset Current g15 g25 nA IB Maximum Input VCM e 0V (Note 5) 100 200 100 200 pA Bias Current 35 50 nA RIN Input Resistance 1011 1011 X VCM Input Common-Mode b12 to g11 b12 to g11 V Voltage Range a14 a14 AVOL Minimum Large Using Pin 6 VO e g10V RL e 2kX 300 100 300 50 VmV Signal Voltage Using Pin 8 VO e g10V RL e 600X 280 100 280 50 VmV Gain 4 |
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