M58WR064B datasheet(66/81 Pages) STMICROELECTRONICS

66 / 81 page

M58WR064T, M58WR064B

66/81

Figure 19. Double Word Program Flowchart and Pseudo code

Note: 1. Status check of b1 (Protected Block), b3 (VPP Invalid) and b4 (Program Error) can be made after each program operation or after

a sequence.

2. If an error is found, the Status Register must be cleared before further Program/Erase operations.

3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.

Write 30h

AI06171

Start

Write Address 1

& Data 1 (3)

Read Status

YES

SR7 = 1

YES

SR3 = 0

SR4 = 0

VPP Invalid

Error (1, 2)

Program

Error (1, 2)

YES

End

YES

SR1 = 0

Program to Protected

Block Error (1, 2)

Write Address 2

& Data 2 (3)

double_word_program_command (addressToProgram1, dataToProgram1,

addressToProgram2, dataToProgram2)

{

writeToFlash (bank_address, 0x30) ;

writeToFlash (addressToProgram1, dataToProgram1) ;

/*see note (3) */

writeToFlash (addressToProgram2, dataToProgram2) ;

/*see note (3) */

/*Memory enters read status state after

the Program command*/

do {

status_register=readFlash (bank_address) ;

/* E or G must be toggled*/

} while (status_register.b7== 0) ;

if (status_register.SR3==1) /*VPP invalid error */

error_handler ( ) ;

if (status_register.SR4==1) /*program error */

error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */

error_handler ( ) ;

}

M58WR064B Datasheet(PDF) 66 Page - STMicroelectronics

M58WR064B Datasheet(HTML) 66 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81

Datasheet Download

Link URL