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GS2N7002 Datasheet(PDF) 1 Page - GTM CORPORATION |
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GS2N7002 Datasheet(HTML) 1 Page - GTM CORPORATION |
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1 / 3 page ![]() GS2N7002 Page: 1/3 ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B G G S S 22N N 77000022 N N -- C C H H A A N N N N E E L L E E N N H H A A N N C C E E M M E E N N T T M M O O D D E E P P O O W W E E R R M M O O S S F F E E T T Description The GS2N7002 is universally used for all commercial-industrial surface mount applications. Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.8 1.10 L1 0.42 REF. A1 0 0.10 L 0.15 0.35 A2 0.8 1.00 b 0.25 0.40 D 1.80 2.20 c 0.10 0.25 E 1.15 1.35 e 0.65 REF. HE 1.80 2.40 Q1 0.15 BSC. Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Drain-Source Voltage VDS 60 V VGS ±20 V Gate-Source Voltage - Continuous - Non-repetitive (tp 50us) VGSM ±40 V Continuous Drain Current (1) ID 500 mA Pulsed Drain Current (2) IDM 800 mA Power Dissipation PD 225 mW Thermal Resistance ,Junction-to-Ambient RthJA 556 /W : Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS=2.5V, ID=0.25mA Gate Body Leakage Current IGSS - - ±100 nA VGS=±20V, VDS=0 Zero Gate Voltage Drain Current IDSS - - 1 uA VDS=60V, VGS=0 On-State Drain Current ID(ON) 500 - - mA VDS=7.5V, VGS=10V - - 5 ID=50mA, VGS=5V Static Drain-Source on-State Resistance RDS(ON) - - 4.5 ID=500mA, VGS=10V Forward Transconductance GFS 80 - - mS VDS>2 VDS(ON), ID=200mA Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF VDS=25V, VGS=0V, f=1MHz (1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse Width 300us, Duty cycle 2%. BVDSS 60V RDS(ON) 4.5 ID 500mA Pb Free Plating Product |
Similar Part No. - GS2N7002 |
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Similar Description - GS2N7002 |
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