GS2N7002K

Page: 2/4

ISSUED DATE :2005/09/19

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

60

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.06

-

V/ :

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

600

-

mS

Gate-Source Leakage Current

-

-

D10

uA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

100

uA

-

-

2

Static Drain-Source On-Resistance

-

-

4

Ł

-

1

1.6

Gate-Source Charge

-

0.5

-

Gate-Drain (“Miller”) Change

-

0.5

-

nC

-

12

-

Rise Time

-

10

-

Turn-off Delay Time

-

56

-

Fall Time

-

29

-

ns

Input Capacitance

-

32

50

Output Capacitance

-

8

-

Reverse Transfer Capacitance

-

6

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t 10sec.