1/2

ISSUED DATE :2004/09/15

REVISED DATE :

G

D

S

E

V O L T A G E 4 5 V, C U R R E N T 0 . 0 3 A

Description

The GS706SD is designed for general purpose detection and high speed switching.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

! :

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

Storage Temperature

Tstg

-40 ~ +125

Maximum Peak Repetitive Reverse Voltage

45

V

Maximum RMS Voltage

32

V

Maximum DC Blocking Voltage

40

V

Peak Forward Surge Current at 8.3mSec single half sine-wave

0.2

A

Typical Junction Capacitance between Terminal (Note 1)

2.0

pF

Maximum Average Forward Rectified Current

Io

0.03

A

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Characteristics

Symbol

Typ.

Unit

Test Condition

Maximum Instantaneous Forward Voltage

0.37

V

IF = 1mA

Maximum Average Reverse Current

IR

1.0

uA

VR = 10V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.

2. ESD sensitive product handling required.