2/4

ISSUED DATE :2005/03/10

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.01

-

V/ :

Gate Threshold Voltage

-0.5

-

-1.2

V

Forward Transconductance

-

1

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-10

uA

-

-

600

-

-

800

Static Drain-Source On-Resistance

-

-

1000

m Ł

-

1.7

2.7

Gate-Source Charge

-

0.3

-

Gate-Drain (“Miller”) Change

-

0.4

-

nC

-

5

-

Rise Time

-

8

-

Turn-off Delay Time

-

10

-

Fall Time

-

2

-

ns

Input Capacitance

-

66

105.6

Output Capacitance

-

25

-

Reverse Transfer Capacitance

-

20

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t 10sec.