1SS88 datasheet(2/5 Pages) RENESAS

Part #	1SS88

Description	Silicon Schottky Barrier Diode for CATV Balanced Mixer

PDF	5 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 5 page

1SS88

REJ03G0615-0300 Rev.3.00 May 24, 2007

Page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

Peak forward current

IFM

Average rectified current

Power dissipation

150

Junction temperature

100

°C

Storage temperature

Tstg

−55 to +100

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1

365

—

430

IF = 1 mA

Forward voltage

VF2

520

—

600

IF = 10 mA

IR1

—

0.2

VR = 2 V

Reverse current

IR2

—

µA

VR = 10 V

Capacitance

—

0.97

VR = 0 V, f = 1 MHz

Capacitance deviation

∆C

—

0.1

VR = 0 V, f = 1 MHz

∆V

—

IF = 2.5 mA

Forward voltage deviation

∆V

—

IF = 10 mA

ESD-Capability

—

C = 200 pF, R = 0

Ω , Both forward

and reverse direction 1 pulse.

Notes: 1. Failure criterion ; IR ≥ 50 µA at VR = 10 V

2. Each group shall unify a multiple of 4 diodes.

3. Not applied to taping-type products.

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