GSS9971

Page: 2/4

ISSUED DATE :2005/10/14

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

60

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.06

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

7

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

25

uA

-

-

50

-

-

60

m

-

32.5

-

Gate-Source Charge

-

4.9

-

Gate-Drain (“Miller”) Change

-

8.8

-

nC

-

9.6

-

Rise Time

-

10

-

Turn-off Delay Time

-

30

-

Fall Time

-

5.5

-

ns

Input Capacitance

-

1658

-

Output Capacitance

-

156

-

Reverse Transfer Capacitance

-

109

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

Reverse Recovery Time

-

29.2

-

ns

Reverse Recovery Charge

-

48

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.