GU88LS02

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ISSUED DATE :2006/01/05

REVISED DATE :

G

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast

switching performance.

The TO-263 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.80

c2

1.25

1.45

b

0.76

1.00

b2

1.17

1.47

L4

0.00

0.30 B D

8.6

9.0

c

0.36

0.5

e

2.54 REF.

L3

1.50 REF.

L

14.6

15.8

L1

2.29

2.79

0˚

8˚

E

9.80

10.4

L2

1.27 REF.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

25

V

Gate-Source Voltage

±20

V

75

A

62.5

A

350

A

Total Power Dissipation

96

W

Linear Derating Factor

0.75

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-case

1.3

: /W

Thermal Resistance Junction-ambient

Max.

Rthj-amb

62

/

: W

25V

5m

75A

Pb Free Plating Product