PIC16F676-ESLASHST datasheet(90/130 Pages) MICROCHIP

90 / 130 page

PIC16F630/676

DS40039E-page 88

12.3

DC Characteristics: PIC16F630/676-I (Industrial)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40

°C ≤ TA ≤ +85°C for industrial

Param

No.

Device Characteristics

Min

Typ†

Max

Units

Conditions

VDD

Note

D020

Power-down Base Current

(IPD)

—

0.99

700

2.0

WDT, BOD, Comparators, VREF,

and T1OSC disabled

—

1.2

770

3.0

—

2.9

995

5.0

D021

—

0.3

1.5

μA

2.0

WDT Current(1)

—1.8

3.5

μA3.0

—8.4

μA5.0

D022

—

μA

3.0

BOD Current(1)

—109

130

μA5.0

D023

—

3.3

6.5

μA

2.0

Comparator Current(1)

—6.1

8.5

μA3.0

—11.5

μA5.0

D024

—

μA2.0

CVREF Current(1)

—85

100

μA3.0

—138

160

μA5.0

D025

—

4.0

6.5

μA

2.0

T1 OSC Current(1)

—4.6

7.0

μA3.0

—

6.0

10.5

μA5.0

D026

—

1.2

755

3.0

A/D Current(1)

—

0.0022

1.0

μA5.0

† Data in ‘Typ’ column is at 5.0V, 25

°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this

peripheral is enabled. The peripheral

Δ current can be determined by subtracting the base IDD or IPD

current from this limit. Max values should be used when calculating total current consumption.

2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is

measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.

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