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STF80N240K6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STF80N240K6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() Features Order code VDS RDS(on) max. ID STF80N240K6 800 V 220 mΩ 16 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STF80N240K6 Product summary Order code STF80N240K6 Marking 80N240K6 Package TO-220FP Packing Tube N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package STF80N240K6 Datasheet DS13794 - Rev 3 - February 2024 For further information contact your local STMicroelectronics sales office. www.st.com |
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