MMBT2907A datasheet(2/3 Pages) VAISH

2 / 3 page

MMBT2907A

Vishay Semiconductors

formerly General Semiconductor

www.vishay.com

Document Number 88223

10-May-02

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

–VCE = 10V, –IC = 0.1mA

——

–VCE = 10V, –IC = 1mA

100

——

DC Current Gain

hFE

–VCE = 10V, –IC = 10mA

100

———

–VCE = 10V, –IC = 150mA

(1)

100

—

300

–VCE = 10V, –IC = 500mA

(1)

——

Collector Cutoff Current

–ICEV

–VEB = 0.5V, –VCE = 30V

——

Collector Cutoff Current

–ICBO

–VCB = 50V, IE = 0

——

0.01

µA

–VCB = 50V, IE =0,TA = 125°C

——

Emitter-Base Cutoff Current

–IBL

–VEB = 0.5V, –VCE = 30V

——

Collector-Emitter Saturation Voltage(1)

–VCEsat

–IC = 150mA, –IB = 15mA

——

0.4

–IC = 500mA, –IB = 50mA

——

1.6

Base-Emitter Saturation Voltage(1)

–VBEsat

–IC = 150mA, –IB = 15mA

——

1.3

–IC = 500mA, –IB = 50mA

——

2.6

Collector-Emitter Breakdown Voltage(1)

–V(BR)CEO

–IC = 10mA, IB = 0

——

Collector-Base Breakdown Voltage

–V(BR)CBO

–IC = 10

µA, IE = 0

——

Emitter-Base Breakdown Voltage

–V(BR)EBO

–IE = 10

µA, IC = 0

5.0

——

Current Gain-Bandwidth Product

–VCE = 20V, –IC = 50mA

200

——

MHz

f = 100MHz

Output Capacitance

Cobo

–VCB = 10V, f = 1.0MHz

——

8pF

IE = 0

Input Capacitance

Cibo

–VEB = 2.0V, f = 1.0MHz

——

IC = 0

Note:

(1) Pulse test: Pulse width

≤ 300µs, duty cycle ≤ 2.0%

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