Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

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▼ Dynamic dv/dt Rating

400V

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▼ Repetitive Avalanche Rated

1.0Ω

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▼ Fast Switching

5.5A

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▼ Simple Drive Requirement

Description

Absolute Maximum Ratings

Symbol

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

A

A

Pulsed Drain Current

1

A

Total Power Dissipation

W

W/℃

Single Pulse Avalanche Energy

2

mJ

Avalanche Current

A

Repetitive Avalanche Energy

mJ

℃

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Max.

1.7

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

Data & specifications subject to change without notice

AP730P

Parameter

Rating

400

5.5

3.5

23

74

Linear Derating Factor

0.59

260

5.5

7

Storage Temperature Range

-55 to 150

200219032

-55 to 150

Parameter

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching ,

ruggedized device design , low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications. The device is suited for switch mode power supplies ,DC-

AC converters and high current high speed switching circuits.

± 30

G

D

S

TO-220

G

D

S