24N60FD2 datasheet(4/9 Pages) SILAN

4 / 9 page

Silan

Microelectronics

SVS24N60F(FJ)(PN)(T)D2_Datasheet

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Rev.:1.3

http: //www.silan.com.cn

Page 4 of 9

TYPICAL CHARACTERISTICS

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Drain-Source Voltage – VDS(V)

Gate-Source Voltage– VGS(V)

Drain Current – ID(A)

Figure 3. On-Resistance Variation vs.

Drain Current

0.2

0.4

0.6

1.2

1.0

Source-Drain Voltage– VSD(V)

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and Temperature

Notes:

1.250µS pulse test

2.VDS=30V

0.1

100

-55°C

25°C

150°C

0.1

100

0.8

Notes:

1.250µS pulse test

2.VGS=0V

300

500

200

100

Note: TC=25°C

VGS=20V

Figure 5. Capacitance Characteristics

Drain-Source Voltage – VDS(V)

Figure 6. Gate Charge Characteristics

Total Gate Charge – Qg(nC)

400

VGS=4V

VGS=5V

VGS=6V

VGS=7V

VGS=9V

VGS=10V

VGS=11V

Notes:

1.250µS pulse test

2.TC=25°C

-55°C

25°C

150°C

VGS=10V

0.1

100

10000

1000

100

VDS=480V

VDS=300V

VDS=120V

Note: ID=24A

Ciss=Cgs+Cgd(Cds=shorted)

Coss=Cds+Cgd

Crss=Cgd

Notes:

1. VGS=0V

2. f=1MHz

Ciss

Coss

Crss

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