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P4C189 Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P4C189 Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation |
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2 / 8 page ![]() P4C189 Page 2 of 8 Document # SRAM100 Rev OR Commercial Symbol V OH V OL V IH V IL I IL I IH I SC Parameter Output High Voltage Output Low Voltage Input High Level Input Low Level Input Low Current Input High Current Output Short Circuit Current Test Conditions V CC = Min., VIN = VIH or VIL, IOH = –3.0 mA V CC = Min., VIN = VIH or VIL, IOL = 24 mA V IN = 0.5 V (except CS) V CC = Max, VIN = 2.7V V CC = Max., VOUT = 0.0V I L Output Leakage Current Industrial P4C189 Min. 2.4 2.0 Max. 0.5 0.8 -0.6 5 -60 55 70 Unit V V V V mA µA mA mA Power Supply Current 50 µA V CC = Max. I CC V OUT = VCC, VCC = Max. MAXIMUM RATINGS(1) Symbol Parameter Value Unit V CC Power Supply Pin with – 0.5 to +7 V Respect to GND Terminal Voltage with – 0.5 to V TERM Respect to GND V CC + 0.5 V (up to 7.0V) T A Operating Temperature – 55 to +125 °C Symbol Parameter Conditions Typ. Unit C IN Input Capacitance V IN = 0V 5 pF C OUT Output Capacitance V OUT = 0V 7 pF CAPACITANCES(4) (V CC = 5.0V, TA = 25°C, f = 1.0MHz) RECOMMENDEDOPERATINGCONDITIONS Symbol Parameter Value Unit T BIAS Temperature Under – 55 to +125 °C Bias T STG Storage Temperature – 65 to +150 °C I OUT DC Output Current 20 mA Grade(2) Commercial Industrial Ambient Temp 0°C to 70°C –40°C to 85°C Gnd 0V Vcc 5.0V ±10% 5.0V ±10% 0V DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) V IN = 0.5 V (CS) -1.2 -150 Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with V IL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. 5. CE is LOW and WE is HIGH for READ cycle. 6. WE is HIGH, and address must be valid prior to or coincident with CE transition LOW. 7. Transition is measured ±200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 8. Read Cycle Time is measured from the last valid address to the first transitioning address. |
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