| Electronic Components Datasheet Search |
|
LB11692JH Datasheet(PDF) 2 Page - Sanyo Semicon Device |
|
|
|||||||||||||||||||||||||||||
LB11692JH Datasheet(HTML) 2 Page - Sanyo Semicon Device |
|
2 / 12 page ![]() LB11692JH No.A0333-2/12 Allowable Operating Ranges at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage range VCC 9.5 to 28 V Constant voltage output current IREG 0 to -30 mA RD output current IRD 0 to 10 mA FG output current IFG 0 to 10 mA Electrical Characteristics at Ta = 25 °C, VCC = VM = 24V Ratings Parameter Symbol Conditions min typ max unit Current drain 1 ICC1 13 17 mA Current drain 2 ICC2 When STOP 4.5 6 mA [Output Block] Output saturation voltage 1 VO sat1 IO = 0.7A,VO(SINK)+VO(SOURCE) 1.5 2.05 V Output saturation voltage 2 VO sat2 IO = 1.5A,VO(SINK)+VO(SOURCE) 2.2 2.9 V Output leakage current IO leak 100 µA Low side diode forward voltage 1 VD1-1 ID = -0.7A 1.1 1.35 V Low side diode forward voltage 2 VD1-2 ID = -1.5A 1.4 1.8 V High side diode forward voltage 1 VD2-1 ID = 0.7A 1.25 1.65 V High side diode forward voltage 2 VD2-2 ID = 1.5A 1.9 2.5 V [5V Constant Voltage Output] Output voltage VREG IO = -5mA 4.7 5.0 5.3 V Line regulation ∆VREG1 VCC = 9.5 to 28V 30 100 mV Load regulation ∆VREG2 IO = -5 to -20mA 20 100 mV [Hall Amplifier] Input bias current IB(HA) -1 -0.2 µA Common-mode input voltage range VICM 0 VREG-2.0 V Hall sensor input sensitivity VHIN 80 mVp-p Hysteresis ∆VIN(HA) 15 24 42 mV Input voltage (low to high) VSLH 12 mV Input voltage (high to low) VSHL -12 mV [CSD Pin] High-level output voltage VOH(CSD) 2.75 3.0 3.25 V Low-level output voltage VOL(CSD) 0.85 1.0 1.15 V External capacitor charge current ICSD1 -3.3 -2.4 -1.4 µA External capacitor discharge current ICSD2 0.09 0.17 0.23 µA Charge/discharge current ratio RCSD Charge current/discharge current 14 Times [Undervoltage Protection Circuit (LVS Pin)] Operating voltage VSDL 3.55 3.8 4.0 V Release voltage VSDH 4.05 4.3 4.5 V Hysteresis ∆VSD 0.35 0.5 0.65 V [Current Limiter Circuit] Limiter voltage VRF VCC-VM 0.45 0.5 0.55 V [Thermal Shutdown Operation] Thermal shutdown operating temperature TSD Design target value* (junction temperature) 150 170 °C Hysteresis ∆TSD Design target value* (junction temperature) 40 °C *: Design target value and no measurement was made. Continued on next page. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |