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PIC16F87 Datasheet(PDF) 9 Page - Microchip Technology |
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PIC16F87 Datasheet(HTML) 9 Page - Microchip Technology |
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9 / 24 page ![]() 2002 Microchip Technology Inc. DS39607B-page 9 PIC16F87/88 3.4.2.7 Begin Erase (Program and Data Memory) The erase block size for program memory is 32 words (row) and 1 word for data memory. The row or word to be programmed must first be erased. This is done by setting the pointer to a location in the row or word and then performing a ‘Begin Erase’ command. The row or word is then erased. The user must allow the combined time for row erase and programming, as specified in the electrical specifications, for programming to complete. This is an externally timed event. The internal timer is not used for this command, so the ‘End Programming’ command must be used to stop erase. A timing diagram for this command is shown in Figure 7-6. 3.4.2.8 Begin Programming Only Programming of program and data memory will begin once this command is received and decoded. The user must allow the time for programming, as specified in the electrical specifications, for programming to complete. An ‘End Programming’ command is required. The internal timer is not used for this command, so the ‘End Programming’ command must be used to stop programming. 1. If the address is pointing to user memory, the user memory alone will be affected. 2. If the address is pointing to the physically implemented configuration memory (2000h- 2008h), the configuration memory will be written. The configuration words will not be written unless the address is specifically pointing to the corresponding address. A timing diagram for this command is shown in Figure 7-7. 3.4.2.9 End Programming After receiving this command, the chip stops programming the memory (configuration memory or user program memory) that it was programming at the time. TABLE 3-1: COMMAND MAPPING FOR PIC16F87/88 Note 1: The code-protect bits cannot be erased with this command. 2: All ‘Begin Erase’ operations can take place over the entire VDD range. Note: This command will also set the write data shift latches to all ‘1’s to avoid issues with downloading only one word before the write. Command Mapping (MSB … LSB) Data Voltage Range Load Configuration 00000 0, data (14), 0 2.0V-5.5V Load Data for Program Memory 00010 0, data (14), 0 2.0V-5.5V Read Data from Program Memory 00100 0, data (14), 0 2.0V-5.5V Increment Address 00110 2.0V-5.5V Begin Erase 01000 externally timed 2.0V-5.5V Begin Programming Only Cycle 11000 externally timed 2.0V-5.5V Bulk Erase Program Memory 01001 externally timed 4.5V-5.5V Bulk Erase Data Memory 01011 externally timed 4.5V-5.5V Chip Erase 11111 internally timed 4.5V-5.5V Load Data for Data Memory 00011 0, zeroes (6), data (8), 0 2.0V-5.5V Read Data from Data Memory 00101 0, zeroes (6), data (8), 0 2.0V-5.5V End Programming 10111 |
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