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AS7C1029 Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation

Part # AS7C1029
Description  5V 256K X 4 CMOS SRAM (Center power and ground)
PDF  9 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C1029 Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation

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AS7C1029
12/5/06, v. 1.0
Alliance Memory
P. 3 of 9
®
Notes:
VIL min = -1.5V for pulse width less than 5ns, once per cycle.
VIH max = VCC+2.0V for pulse width less than 5ns, once per cycle.
Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
Input voltage
VIH
2.2
VCC + 0.5
V
VIL
–0.5
0.8
V
Ambient operating temperature (Industrial)
TA
–40
85
o C
DC operating characteristics (over the operating range)1
Parameter
Symbol
Test conditions
AS7C1029-12
Unit
Min
Max
Input leakage current
| I
LI |
VCC = Max, VIN = GND to VCC
–5
μA
Output leakage current
| I
LO |
VCC = Max, CE = VIH,
Vout = GND to VCC
–5
μA
Operating power supply current
ICC
VCC = Max
CE
V
IL, f = fMax, IOUT = 0 mA
160
mA
Standby power supply current1
ISB
VCC = Max
CE
≥ V
IH, f = fMax
–40
mA
ISB1
VCC = Max
CE
≥ V
CC–0.2 V,
VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V,
f = 0
10
mA
Output voltage
VOL
IOL = 8 mA, VCC = Min
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
V
Capacitance (f = 1 MHz, Ta = 25
o C, V
CC = NOMINAL)
2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE, WE, OE
VIN = 3dV
8
pF
I/O capacitance
CI/O
I/O
VIN = VOUT = 3dV
8
pF
Note:
This parameter is guaranteed by device characterization, but is not production tested.



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