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ADS30A80FS Datasheet(PDF) 3 Page - Advanced (Shenzhen) Electronics Co.,Ltd |
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ADS30A80FS Datasheet(HTML) 3 Page - Advanced (Shenzhen) Electronics Co.,Ltd |
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3 / 6 page ![]() ADS30A60F/80F 3 / 6 www.advsemi.com Feb,2013 -Rev.3.01 ADV FIG.2: Average on-state current VS Allowable case Temperature(Single phase half wave) FIG.3: Gate trigger current VS Junction temperature FIG.1: Maximum average power dissipation (Single phase half wave) FIG.4: Rated surge on-state current ( Non-Repetitive) FIG.5: On-state characteristics(Max) 0 50 100 150 200 250 IGT(Tj)/IGT(25°C) x 100(%) 150 125 100 75 50 25 -50 0 -25 0 50 100 150 200 250 300 350 400 Surge On-State Current(A) 102 10 1 f=50Hz Tj=25°C Max Power Dissipation(W) 25 20 10 5 Power Dissipation(W) 0 4 8 12 16 20 24 28 32 36 40 15 θ=180° 360° θ ITM(A),On-State Current 10-1 100 101 102 4 3.5 3 2.5 2 1.5 1 0.5 (1) (2) (1)Tj=25°C Max (2)Tj=125°C Max 0 5 10 15 20 25 Average On-state Current(A) 150 120 90 60 30 0 360° θ θ=180° |
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