13

© 2000 Silicon Storage Technology, Inc.

S71142

373-3 11/00

16 Megabit Concurrent SuperFlash

SST36VF1601 / SST36VF1602

Advance Information

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AC CHARACTERISTICS

SST36VF1601/1602-70

SST36VF1601/1602-90

Symbol

Parameter

Min

Max

Min

Max

Units

Read Cycle Time

70

90

ns

Chip Enable Access Time

70

90

ns

Address Access Time

70

90

ns

Output Enable Access Time

35

45

ns

CE# Low to Active Output

0

0

ns

OE# Low to Active Output

0

0

ns

CE# High to High-Z Output

20

30

ns

OE# High to High-Z Output

20

30

ns

Output Hold from Address Change

0

0

ns

RESET# Pulse Width

500

500

ns

RESET# High before Read

50

50

ns

RESET# Pin Low to Read Mode

20

20

µs

373 PGM T12.3

Symbol

Parameter

Min

Max

Units

Word-Program Time

20

µs

Address Setup Time

0

ns

Address Hold Time

40

ns

WE# and CE# Setup Time

0

ns

WE# and CE# Hold Time

0

ns

OE# High Setup Time

0

ns

OE# High Hold Time

10

ns

CE# Pulse Width

40

ns

WE# Pulse Width

40

ns

WE# Pulse Width High

30

ns

CE# Pulse Width High

30

ns

Data Setup Time

30

ns

Data Hold Time

0

ns

Software ID Access and Exit Time

150

ns

Sector-Erase

25

ms

Block-Erase

25

ms

Chip-Erase

100

ms

RY/BY# Delay Time

90

ns

RY/BY# Recovery Time

0

ns

Note: 1. This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.

2. This parameter applies to Sector-Erase, Block-Erase and Program operations. This parameter does not apply to Chip-Erase.

373 PGM T13.3