TIP161 datasheet(2/7 Pages) POINN

2 / 7 page

TIP160, TIP161, TIP162

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ICEO

Collector-emitter

cut-off current

VCE = 320 V

VCE = 350 V

VCE = 380 V

IB = 0

TIP160

TIP161

TIP162

ICEX(sus)

Collector-emitter

sustaining current

VCLAMP = V(BR)CEO

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

100

hFE

Forward current

transfer ratio

VCE = 2.2 V

IC =

4 A

(see Notes 5 and 6)

200

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.1A

IB =

1 A

IC = 6.5 A

IC = 10 A

(see Notes 5 and 6)

2.8

2.9

VBE(sat)

Base-emitter

saturation voltage

IB =

0.1A

IC = 6.5 A

(see Notes 5 and 6)

2.2

VEC

Parallel diode

forward voltage

IE =

10 A

IB = 0

(see Notes 5 and 6)

3.5

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

°C/W

RθJA

Junction to free air thermal resistance

41.7

°C/W

CθC

Thermal capacitance of case

1.4

J/°C

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

Delay time

IC = 6.5 A

VBE(off) = -5 V

IB(on) = 100 mA

RL = 5 Ω

IB(off) = -100 mA

Rise time

1.5

µs

Storage time

2.2

µs

Fall time

2.6

µs

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