Nexperia

MMBZ33VC-T

Low capacitance unidirectional double ESD protection diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

IPPM

rated peak pulse current tp = 8/20 µs

[1]

-

2.8

A

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

ESD maximum ratings

IEC 61000-4-2; contact discharge

[2]

-

20

kV

VESD

electrostatic discharge

voltage

IEC 61000-4-2; air discharge

[2]

-

20

kV

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5

[2] Device stressed with ten non-repetitive ESD pulses

t (µs)

0

40

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

MMBZ33VC-T

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Product data sheet

8 November 2024

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