TSM4420CS datasheet(2/3 Pages) TSC

2 / 3 page

TSM4420

2-3

2005/08 rev. B

Electrical Characteristics

TJ = 25

oC, unless otherwise noted

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

VGS = 4.5V, ID = 11A

RDS(ON)

mΩ

Drain-Source On-State Resistance

VGS = 10V, ID = 13.5A

RDS(ON)

8.5

mΩ

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

1.0

3.0

Zero Gate Voltage Drain Current

VDS = 24V, VGS = 0V

IDSS

1.0

Gate Body Leakage

VGS = ± 20V, VDS = 0V

IGSS

±100

Forward Transconductance

VDS =10V, ID = 35A

gfs

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

6.6

Gate-Drain Charge

VDS = 15V, ID = 13.5A,

VGS = 5V

Qgd

4.0

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD = 15V, RL = 15Ω,

ID = 1A, VGEN = 10V,

RG = 24Ω

Source-Drain Diode

Max. Diode Forward Current

Diode Forward Voltage

IS = 20A, VGS = 0V

VSD

0.75

1.1

Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%

2. Negligible, Dominated by circuit inductance.

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