2

USL

30

35

40

50

55

45

LSL

24 24.2

24.6

25 25.2

25.6

26

LSL

23

24

25

26

27

28

Thermal Resistance [2]

(Vdd = 3.3V),

θθθθθjc = 33.3 °C/W

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using 150 °C

Liquid Crystal Measurement Technique.

3. Board (package belly) temperature, Tb is 25

°C. Derate 30mW/ °C for Tb>123.36 °C.

Absolute Maximum Rating [1] Tc=25°C

Product Consistency Distribution Charts [4,5]

Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA

Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dB

Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB

Sym bol

Param eter

Units

Absolute M ax.

Device Voltage, RF output to

ground

V5

CW RF Input Power (Vdd = 3.3V )

dBm

10

W0.8

Junction Tem perature

Storage Tem perature

-65 to 150

Notes:

4. Distribution data sample size is 500 samples taken from 3 different

wafers and 3 different lots. Future wafers allocated to this product

may have nominal values anywhere between the upper and lower

limits.

5. Measurements are made on production test board, which

represents a trade-off between optimal Gain and P1dB. Circuit

losses have been de-embedded from actual measurements.