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SCT040W65G3-4 Datasheet(PDF) 4 Page - STMicroelectronics

Part # SCT040W65G3-4
Description  Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT040W65G3-4 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 7. Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Continuous diode forward current
TC = 25 °C
-
30
A
TC = 100 °C
-
30
VSD
Diode forward voltage
ISD = 20 A, VGS = 0 V
-
2.8
V
trr
Reverse recovery time
ISD = 20 A, di/dt = 1000 A/μs,
VDD = 400 V
-
16
ns
Qrr
Reverse recovery charge
-
83
nC
IRRM
Reverse recovery current
-
9
A
1. ISD is limited by package.
SCT040W65G3-4
Electrical characteristics
DS14582 - Rev 1
page 4/12



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