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ADM7P02B Datasheet(PDF) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

Part # ADM7P02B
Description  P-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  ADV [Advanced (Shenzhen) Electronics Co.,Ltd]
Direct Link  http://www.advsemi.com/en/
Logo ADV - Advanced (Shenzhen) Electronics Co.,Ltd

ADM7P02B Datasheet(HTML) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

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www.advsemi.com
Ver.0.10
ADV
Electrical Characteristics (TJ=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
On/off
Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250uA
-20
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= -20V, VGS=0V
--
--
-1
uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=--250uA
-0.4
-0.7
-1.0
V
IGSS
Gate Leakage Current
VGS=±12V, VDS=0V
--
--
±
100
nA
RDS(ON)
Drain-SourceOn-stateResistance⑵
VGS= -4.5V, IDS=-7A
--
18.7
24.5
m
VGS= -2.5V, IDS=-4.6A
22.7
32
Dynamic Characteristics
Ciss
Input Capacitance
VGS=0V,
VDS= -10V,
Frequency=1.0MHz
--
2000
--
pF
Coss
Output Capacitance
--
242
--
Crss
Reverse Transfer Capacitance
--
231
--
Switching Characteristics
td(ON)
Turn-on Delay Time⑴
VDD=-10V,
ID=- 7A, VGS=-4.5V,
RGEN=2.5Ω
--
10
--
ns
tr
Turn-on Rise Time⑴
--
31
--
td(OFF)
Turn-off Delay Time⑴
--
28
--
tf
Turn-off Fall Time⑴
--
8
--
Qg
Total Gate Charge⑴
VDS=-10V, VGS= -4.5V,
IDS=-3A
--
15.3
--
nC
Qgs
Gate-Source Charge⑴
--
2.2
--
Qgd
Gate-Drain Charge⑴
--
4.4
--
Diode Characteristics
VSD
Diode Forward Voltage⑵
ISD = -7A, VGS = 0
--
-0.8
-1.2
V
NOTES:
1.
Independent of operating temperature.
2.
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
3.
Surface Mounted on FR4 Board, t < 10 sec.



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