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IRG4PC30SPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC30SPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRG4PC30SPbF 2 www.irf.com Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.75 V/°C VGE = 0V, IC = 1.0mA 1.40 1.6 IC = 18A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 1.84 IC = 34A See Fig.2, 5 1.45 IC = 18A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
6.0 11 S VCE = 100V, IC = 18A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 50 75 IC = 18A Qge Gate - Emitter Charge (turn-on) 7.311 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 17 26 VGE = 15V td(on) Turn-On Delay Time 22 tr Rise Time 18 TJ = 25°C td(off) Turn-Off Delay Time 540 810 IC = 18A, VCC = 480V tf Fall Time 390 590 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss 0.26 Energy losses include "tail" Eoff Turn-Off Switching Loss 3.45 mJ See Fig. 9, 10, 14 Ets Total Switching Loss 3.71 5.6 td(on) Turn-On Delay Time 21 TJ = 150°C, tr Rise Time 19 IC = 18A, VCC = 480V td(off) Turn-Off Delay Time 790 VGE = 15V, RG = 23Ω tf Fall Time 760 Energy losses include "tail" Ets Total Switching Loss 6.55 mJ See Fig. 11, 14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 1100 VGE = 0V Coes Output Capacitance 72 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 13 = 1.0MHz Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns |
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