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D60VC100 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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D60VC100 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() D60VC20 ... D60VC120 D60VC20 ... D60VC120 Silicon-Twin-Rectifiers Silizium-Doppeldiode Version 2005-04-26 Dimensions - Maße [mm] Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60...800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden 28.5 x 28.5 x 10 [mm] Weight approx. Gewicht ca. 23 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose im Karton Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) D60VC20 200 200 D60VC40 400 400 D60VC60 600 600 D60VC80 800 800 D60VC100 1000 1000 D60VC120 1200 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last per diode 'pro Diode IFAV 60 A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 120 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 450/500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1000A2s Isolation voltage terminals to case Isolationsspannung Anschlüsse zum Gehäuse t = 1 min VISO ≥ 2000 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C 1 Per diode – Pro Diode 2 Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 Type 24.3±0.2 0.8 6.3 Ø 5.2 |
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