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2N7002 Datasheet(PDF) 2 Page - Supertex, Inc |
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2N7002 Datasheet(HTML) 2 Page - Supertex, Inc |
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2 / 5 page ![]() 2 2N7002 Electrical Characteristics (T A=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 60 - - V V GS = 0V, ID = 10µA V GS(th) Gate threshold voltage 1.0 - 2.5 V V GS = VDS, ID = 250µA ∆V GS(th) Change in V GS(th) with temperature - - -5.5 mV/OCV GS = VDS, ID = 250µA I GSS Gate body leakage current - - ±100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current - - 1.0 µA V GS = 0V, VDS = Max rating - - 500 V GS = 0V, VDS = 0.8Max rating, T A = 125 OC I D(ON) ON-state drain current 500 - - mA V GS = 10V, VDS = 25V R DS(ON) Static drain-to-source ON-state resistance - - 7.5 Ω V GS = 5.0V, ID = 50mA - - 7.5 V GS = 10V, ID = 500mA ∆R DS(ON) Change in R DS(ON) with temperature - - 1.0 %/OCV GS = 10V, ID = 500mA G FS Forward transconductance 80 - - mmho V DS = 25V, ID = 500mA C ISS Input capacitance - - 50 pF V GS = 0V, V DS = 25V, f = 1.0MHz C OSS Common source output capacitance - - 25 C RSS Reverse transfer capacitance - - 5 t (ON) Turn-ON time - - 20 ns V DD = 30V, ID = 200mA, R GEN = 25Ω t (OFF) Turn-OFF time - - 20 V SD Diode forward voltage drop - 1.2 - V V GS = 0V, ISD = 200mA t rr Reverse recovery time - 400 - ns V GS = 0V, ISD = 800mA Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit Thermal Characteristics Device Package I D (continuous)* (mA) I D (pulsed) (mA) Power Dissipation @T A = 25 OC (W) θ jc ( OC/W) θ ja ( OC/W) I DR * (mA) I DRM (mA) 2N7002 TO-236AB 115 800 0.36 200 350 115 800 Notes: * I D (continuous) is limited by max rated TJ. 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD RGEN 0V 0V |
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