SCTW35N65G2V datasheet(3/12 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 3. On/off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = -10 to 22 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

1.8

3.2

5.0

RDS(on)

Static drain-source on-resistance

VGS = 20 V, ID = 20 A

mΩ

VGS = 18 V, ID = 20 A

VGS = 20 V, ID = 20 A, TJ = 200 °C

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 400 V, f = 1 MHz

1370

Coss

Output capacitance

125

Crss

Reverse transfer capacitance

Intrinsic gate resistance

f = 1 MHz

Total gate charge

VDD = 400 V, ID = 20 A, VGS = 0 to 20 V

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 5. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

Turn-on switching energy

VDD = 400 V, ID = 20 A,

RG = 4.7 Ω, VGS = -5 to 20 V

100

µJ

Eoff

Turn-off switching energy

µJ

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 20 A,

RG = 4.7 Ω, VGS = -5 to 20 V

Fall time

td(off)

Turn-off delay time

Rise time

SCTW35N65G2V

Electrical characteristics

DS12076 - Rev 5

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