TIP32 ... TIP32C

Min.

Typ.

Max.

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

TIP32

TIP32A

–

–

–

–

300 nA

300 nA

TIP32B

TIP32C

–

–

–

–

300 nA

300 nA

TIP32

TIP32A

–

–

–

–

200 nA

200 nA

TIP32B

TIP32C

–

–

–

–

200 nA

200 nA

Emitter-Base cutoff current

––

1 mA

Gain-Bandwidth Product – Transitfrequenz

3 MHz

–

–

Small signal current gain – Kleinsignal-Stromverstärkung

20

3

–

–

–

–

Switching times – Schaltzeiten (between 10% and 90% levels)

turn-on time

turn-off time

–

300 ns

–

–1 µs

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

< 3 K/W

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

M4

9 ± 10% lb.in.

1 ± 10% Nm

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

TIP31 ... TIP31C

1

Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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