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TN2124 Datasheet(PDF) 2 Page - Supertex, Inc |
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TN2124 Datasheet(HTML) 2 Page - Supertex, Inc |
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2 / 5 page ![]() 2 TN2124 Electrical Characteristics (@25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 240 - - V V GS = 0V, ID = 1.0mA V GS(th) Gate threshold voltage 0.8 - 2.0 V V GS = VDS, ID= 1.0mA ΔV GS(th) Change in V GS(th) with temperature - - -5.5 mV/OCV GS = VDS, ID= 1.0mA I GSS Gate body leakage - 0.1 100 nA V GS = ± 20V, VDS = 0V I DSS Zero gate voltage drain current - - 1.0 µA V GS = 0V, VDS = Max Rating - - 100 µA V GS = 0V, VDS = 0.8 Max Rat- ing, T A = 125°C I D(ON) ON-state drain current 140 - - mA V GS = 4.5V, VDS = 25V R DS(ON) Static drain-to-source ON-state resistance -- 30 Ω V GS = 3.0V, ID = 25mA -- 15 Ω V GS = 4.5V, ID = 120mA ΔR DS(ON) Change in R DS(ON) with temperature - 0.7 1.0 %/OCV GS = 4.5V, ID = 120mA G FS Forward transductance 100 170 - mmho V DS = 25V, ID = 120mA C ISS Input capacitance - 38 50 pF V GS = 0V, V DS = 25V, f = 1.0MHz C OSS Common source output capacitance - 9.0 15 C RSS Reverse transfer capacitance - 3.0 5.0 t d(ON) Turn-ON delay time - 4.0 7.0 ns V DD = 25V, I D = 140mA, R GEN = 25Ω t r Rise time - 2.0 5.0 t d(OFF) Turn-OFF delay time - 7.0 10 t f Fall time - 9.0 12 V SD Diode forward voltage drop - - 1.8 V V GS = 0V, ISD = 120mA t rr Reverse recovery time - 400 - ns V GS = 0V, ISD = 120mA Notes: (1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) (2) All A.C. parameters sample tested. Notes: * I D (continuous) is limited by max rated Tj . Thermal Characteristics Package I D (continuous)(*) (mA) I D (pulsed) (mA) Power Dissipation @T A = 25 OC (W) θ jc (OC/W) θ ja (OC/W) I DR (*) (mA) I DRM (mA) TO-236AB (SOT-23) (K1) 134 250 0.36 200 350 134 250 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD RGEN 0V 0V |
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