POWER MANAGEMENT

1

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SC1205H

High Speed Synchronous Power

MOS.ET Driver

PRELIMINARY

.eatures

Applications

Revision 2, June 2002

The SC1205H is a cost effective, High Drive Voltage,

Dual MOS.ET Driver designed for switching High and Low

side Power MOS.ETs. Each driver is capable of Ultra-

fast rise/fall times as well as a 20ns max propagation

delay from input transition to the gate of the power .ET’s.

An internal Overlap Protection circuit prevents shoot-

through from Vin to GND in the main and synchronous

MOS.ETs. The Adaptive Overlap Protection circuit en-

sures the Bottom .ET does not turn on until the Top .ET

source has reached a voltage low enough to prevent

cross-conduction.

Higher gate voltage drive capability of 8V (top and

bottom) optimally reduces Rds_on of power MOS.ETs

without excessive driver and .ET switching losses. The

high current drive capability (5A peak) allows fast switch-

ing, thus reducing switching losses at high (up to 1MHz)

frequencies without causing thermal stress on the driver.

The high voltage CMOS process allows operation from 5-

18 Volts at top MOS.ET drain, thus making SC1205H

suitable for battery powered applications. Connecting

Enable pin (EN) to logic low shuts down both drives and

reduces operating current to less than 10µA.

An under-voltage-lock-out and overtemperature shut-

down feature is included to guarantee proper and safe

operation. The SC1205H is offered in a standard SO-8

package.

load)

MOS.ET RDS_ON at minimum switching loss

shoot-through protection

of small inductors and low cost caps in place of

electrolytics

Typical Application Circuit

1.5V,40A

+8V

SC1205H

CO

BST

TG

DRN

VS

EN

BG

GND

+8V

10

70N03

SC1205H

CO

BST

TG

DRN

VS

EN

BG

GND

70N03

10nf

SC2422B

12

9

2

3

1

13

7

5

6

11

14

4

10

15

16

8

OUT2

GND

VID3

VID2

VID4

OUT1

FB

VID0

ERROUT

OC-

OC+

VID1

UVLO

BGOUT

VCC

RREF

70N03

10u,CER

Ri

2200uf

70N03

Rf

Vin 5-12V

2.5m

+8V

Rref

Description