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2N6990 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N6990 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
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2 / 2 page  2N6990 Silicon NPN Transistor Dat a Sheet Copyright © 2003 Semicoa Rev. D.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 50 Volts Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 75 Volts VCB = 60 Volts 10 10 µA nA Collector-Base Cutoff Current ICBO3 VCB = 60 Volts, TA = 150°C 10 µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 6 Volts VEB = 4 Volts 10 50 µA nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55°C 50 75 100 100 30 35 325 300 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 1.2 2.0 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA, f = 100 MHz 2.5 10 Small Signal Short Circuit Forward Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA, f = 1 kHz 50 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 8 pF Open Circuit Input Capacitance CIBO VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 25 pF Transistor to Transistor Resistance |RT-T| |VT-T| = 500 Volts 10 10 Ω Switching Characteristics Saturated Turn-On Time tON 35 ns Saturated Turn-Off Time tOFF 300 ns |
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