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LM2418 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM2418 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage Va a 95V Storage Temperature Range TSTG b 25 Cto a100 C Operating Temperature Range TCASE b 20 Cto a100 C Lead Temperature (Soldering k10 sec) 300 C ESD Tolerance tbd Electrical Characteristics Va e 90V CL e 8 pF DC input bias VIN e 36 VDC 50VPP output swing VBIAS ea12V TA e 25 C unless otherwise noted Symbol Parameter Conditions LM2418 Units Min Typ Max ICC Supply Current (per Amplifier) No Input or Output Load 18 26 mA VOUT Output Offset Voltage VIN e 36V 46 53 60 VDC tr Rise Time 10% to 90% (Note 3) 12 20 ns tf Fall Time 10% to 90% (Note 3) 12 20 ns BW Bandwidth b 3 dB 30 MHz AV Voltage Gain b 17 b 19 b 23 VV OS Overshoot 5 % LE Linearity Error (Note 1) 8 % D AV Gain Matching (Note 2) 10 dB Note 1 Linearity Error is defined as the variation in small signal gain from a20V to a70V output with a 100 mV AC 1 MHz input signal Note 2 Calculated value from Voltage Gain test on each channel Note 3 Guaranteed parameter not tested AC Test Circuit Figure 2 shows a typical test circuit for evaluation of the LM2418 This circuit is designed to allow testing of the LM2418 in a 50X environment such as a pulse generator oscilloscope or network analyzer TLK11125 – 3 8 pF is total load capacitance It includes all parasitic capacitance FIGURE 2 Test Circuit (One Section) Typical Performance Characteristics LM2418 Frequency Response TLK11125 – 4 LM2418 Pulse Response TLK11125 – 5 FIGURE 3 2 |
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