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2N2222A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N2222A
Description  Silicon NPN Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N2222A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N2222A Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N2222A Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N2222A Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Silicon NPN Power Transistor
2N2222A
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVCBO
Collector-Base Breakdown Voltage
IC= 10uA; IB= 0
75
-
-
V
BVCEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
50
-
-
V
BVEBO
Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
6
-
-
V
ICBO
Collector-Base Cutoff Current
VCB= 60V; IE= 0
-
-
10
nA
ICEO
Collector-Emitte Cutoff Current
VCE= 50V; IE= 0
-
-
50
nA
IEBO
Emitter-Base Cutoff Current
VEB= 4V; IC= 0
-
-
10
nA
VCE(sat)
Collector to Emitter Saturation Voltage IC=500mA，IB=50mA
-
-
1
V
VBE(sat)
Base to Emitter Saturation Voltage
IC=500mA，IB=50mA
-
-
2
V
hFE1
DC Current Gain
IC= 0.1mA ; VCE= 10V
50
-
-
-
hFE2
DC Current Gain
IC= 10mA ; VCE= 10V
100
-
-
-
hFE3
DC Current Gain
IC= 150mA ; VCE= 10V
100
-
300
-
hFE4
DC Current Gain
IC= 500mA ; VCE= 10V
40
-
-
-



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