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STPS8H100D Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS8H100D Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STPS8H100 2/9 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.48 x IF(AV) + 0.0125 IF 2 (RMS) Table 2. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AC, D2PAK 1.6 ° C/W TO-220FPAC 4 Table 3. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 4.5 µA Tj = 125° C 2 6.0 mA VF (2) Forward voltage drop Tj = 25° C IF = 8 A 0.71 V Tj = 125° C 0.56 0.58 Tj = 25° C IF = 10 A 0.77 Tj = 125° C 0.59 0.64 Tj = 25° C IF = 16 A 0.81 Tj = 125° C 0.65 0.68 1. tp = 5 ms, δ < 2% 2. tp = 380 µs, δ < 2% Figure 1. Average forward power dissipation versus average forward current Figure 2. Normalized avalanche power derating versus pulse duration 0123 4567 89 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 I (A) F(av) P (W) F(av) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 T δ=tp/T =tp/T tp tp 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM |
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