STPS8H100G datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS8H100

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Figure 9.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAC)

Figure 10.

Reverse leakage current versus

reverse voltage applied (typical

values)

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

=tp/T

102030405060708090

100

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

5E+3

VR(V)

IR(µA)

Tj=125°C

Tj=25°C

Figure 11.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 12.

Forward voltage drop versus

forward current (maximum values)

Figure 13.

Thermal resistance junction to

ambient versus copper surface

under tab - Epoxy printed circuit

board FR4, ecu = 35 µm (D

2PAK)

100

200

500

1000

VR(V)

C(pF)

F=1MHz

Tj=25°C

0.2

0.4

0.6

0.8

1.2

1.4

1.6

0.1

1.0

10.0

50.0

VFM(V)

IFM(A)

Tj=25°C

Tj=125°C

S(Cu) (cm²)

Rth(j-a) (°C/W)

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