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IRF9540NLPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF9540NLPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF9540NS/LPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) Starting TJ = 25°C, L = 0.88mH RG = 25Ω, IAS = -14A. (See Figure 12) ISD ≤ -14A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 117 m Ω VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V gfs Forward Transconductance 5.6 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– -50 µA ––– ––– -250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Qg Total Gate Charge ––– 73 110 nC Qgs Gate-to-Source Charge ––– 13 20 Qgd Gate-to-Drain ("Miller") Charge ––– 38 57 td(on) Turn-On Delay Time ––– 13 ––– ns tr Rise Time ––– 64 ––– td(off) Turn-Off Delay Time ––– 40 ––– tf Fall Time ––– 45 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1450 ––– pF Coss Output Capacitance ––– 430 ––– Crss Reverse Transfer Capacitance ––– 230 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– -23 (Body Diode) A ISM Pulsed Source Current ––– ––– -92 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.6 V trr Reverse Recovery Time ––– 140 210 ns Qrr Reverse Recovery Charge ––– 890 1340 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = VGS, ID = -250µA VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -14A f TJ = 25°C, IF = -14A, VDD = -25V di/dt = -100A/µs f TJ = 25°C, IS = -14A, VGS = 0V f showing the integral reverse p-n junction diode. VGS = -10V f MOSFET symbol VGS = 0V VDS = -25V Conditions ƒ = 1.0MHz, See Fig. 5 RG = 5.1Ω ID = -14A VDS = -50V, ID = -14A VDD = -50V ID = -14A VGS = -20V VGS = 20V VDS = -80V VGS = -10V f |
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