FSL306LR

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12

TYPICAL APPLICATION CIRCUIT

Application

Input Voltage

Rated Output

Rated Power

Auxilary Power

85~300 VAC

12 V (150 mA)

2.05 W

Power Supply

5 V (50 mA)

Key Design Notes

• Small current rating inductors (L1 & L2), an SMD−type resistor (R1), and an additional AC rectifying diode (D2) are

placed for good EMI performance.

• External bias circuitry, a SMD−type resistor (R2), and a small−signal diode (D5) reduce power loss of the internal

high−voltage regulator.

Figure 31. Schematic

1.GND

2.V CC

5.Vcomp

3.ILIMIT

4.V FB

7.Drain

6.Drain

12 V

Output

AC

F1

VCC

VCC

D1

S1M

SMA

L1

470

mH

C1

4.7

mF

400 V

C8

220 nF

0805

R5

0805

D3

ES1J

SMA

C3

L3

680

mH

D4

ES1J

SMA

D5

1N4148

SOD32−F

R2

0805

R3

0805

R4

0805

C5

2.2

mF

0805

C6

1

mF

0805

U1

FSL306LR

C9

330 pF

0805

D2

S1M

SMA

5 V

Output

U2

KA78L05AI

C4

47

mF

25 V

C2

6.8

mF

400 V

L2

470

mH

C7

10 nF

0805

R1

0805

10

W/1 W

220

W

3.3 k

W

20 k

W

10

W

5.1 k

W

100

mF/25 V

Table 1. BILL OF MATERIALS

Part

Value

Note

Part

Value

Note

Fuse

Diode

F1

10 W

1 W, Fusible Resistor

D1

S1M

1 A / 1000 V General−Purpose Rectifier

Resistor

D1

S1M

onsemi

R1

3.3 k

W

SMD 0805, 5%

D2

S1M

1 A / 1000 V General−Purpose Rectifier

R2

10

W

SMD 0805, 5%

onsemi

R3

20 k

W

SMD 0805, 1%

D3

ES1J

1 A / 600 V Ultra−Fast Recovery Rectifier

R4

5.1 k

W

SMD 0805, 1%

onsemi

R5

220 k

W

SMD 0805, 5%

D4

ES1J

1 A / 600 V Ultra−Fast Recovery Rectifier

Capacitor

onsemi

C1

4.7

mF / 400 V

Electrolytic

D5

1N4148

High Conductance Fast Diode

C2

6.8

mF / 400 V

Electrolytic

onsemi

C3

100

mF / 25 V

Electrolytic

Inductor

C4

47

mF / 25 V

Electrolytic

L1

470

mH

SYNTON

C5

2.2

mF

SMD 0805

L2

470

mH

SYNTON

C6

1

mF

SMD 0805

L3

680

mH

PKS−0807−681K

C7

10 nF

SMD 0805

3L Electronic

C8

220 nF

SMD 0805

C9

330 pF

SMD 0805

U1

FSL306LRN /

FSL306LRL

onsemi

U2

KA78L05AIMTF

0.1 A / 5 V Positive Voltage Regulator

onsemi