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STF25NM60N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF25NM60N
Description  N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF25NM60N Datasheet(HTML) 5 Page - STMicroelectronics

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STB25NM60N/-1 - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
5/18
Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300V, ID = 10A
RG =4.7Ω VGS = 10V
(see Figure 17)
24.5
18
94
24
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 20A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A, di/dt = 100A/µs
VDD = 100V, Tj = 25°C
(see Figure 22)
427
7.2
33.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see Figure 22)
526
9.1
34.5
ns
µC
A



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