WU X I C H IN A RESOURCES HUAJIN G MICROELECTRONICS CO., LTD. Page 2 of 10

20 12

○

R

CS2N60F A9H

Huajing Discrete Devices

Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID=250µA

600

--

--

V

ΔBV

DSS/ΔTJ

Bvdss Temperature Coefficient

ID=250uA,Reference25℃

--

0.6

--

V/℃

VDS = 600V, VGS= 0V,

Ta = 25℃

--

--

1

IDSS

Drain to Source Leakage Current

VDS =480V, VGS= 0V,

Ta = 125℃

100

µA

IGSS(F)

Gate to Source Forward Leakage

VGS= 30V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage

VGS =-30V

--

--

-100

nA

ON Characteristics

Rating

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

RDS(ON)

Drain-to-Source On-Resistance

VGS=10V,ID=1.0A

--

3.6

4.5

Ω

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

2.0

4.0

V

Pulse width tp≤380µs,δ≤2%

Dynamic Characteristics

Rating

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

gfs

Forward Transconductance

VDS=15V, ID =1.0A

1.8

--

S

Ciss

Input Capacitance

--

280

Coss

Output Capacitance

--

31

Crss

Reverse Transfer Capacitance

VGS = 0V VDS = 25V

f = 1.0MHz

--

5.4

pF

Resistive Switching Characteristics

Rating

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

td(ON)

Turn-on Delay Time

--

7

--

tr

Rise Time

--

5

--

td(OFF)

Turn-Off Delay Time

--

26

--

tf

Fall Time

ID =2.0A

VDD = 300V

VGS = 10V

RG = 9.1Ω

--

10.5

--

ns

Qg

Total Gate Charge

--

8.5

Qgs

Gate to Source Charge

--

1.5

Qgd

Gate to Drain (“Miller”)Charge

ID =2.0A

VDD =300V

VGS = 10V

--

4.0

nC