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2SC2001 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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2SC2001 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page  TO-92 Plastic-Encapsulate d Transistors 2SC2001 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.6 W (Tamb=25 ℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=20 V , IB=0 0.1 µA Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 µA DC current gain hFE VCE=1V, IC=100mA 90 400 Collector-emitter saturation voltage VCE(sat) IC=700mA, IB= 70mA 0.6 V Base-emitter saturation voltage VBE(sat) IC= 700mA, IB=70mA 1.2 V Transition frequency f T VCE=6V, IC= 10mA f = 30MHz 50 MHz CLASSIFICATION OF hFE Rank M L K Range 90-180 135-270 200-400 1 2 3 TO-92 1. EMITTER 2. COLLECTOR 3. BASE Transys Electronics LI M ITE D |
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